The ferroelectric field-effect transistor with negative capacitance

Abstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing stable static in non-transient non-hysteretic regime remains a daunting task. The problem stems from lack understanding how origin NC due emergence domain state can be put use for implementing FET. Here we forth an ingenious design domain-based with reversible capacitance. Using dielectric coating capacitor enables tunability improving tremendously performance transistors.